elektronische bauelemente KTD1304 0.3 a, 25 v npn plastic encapsulated transistor 01-june-2005 rev. a page 1 of 2 rohs compliant product a suffix of ?-c? specifies halogen and lead free features z high emitter-base voltage: v ebo =12v(min) z low on resistance: ron=0.6 ? (max)(i b =1ma) package dimensions absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 12 v collector current - continuous i c 300 ma collector power dissipation pc 200 mw junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. typ. max. unit test conditions bvcbo 25 - - v i c = 100 ua bvceo 20 - - v i c = 1 ma bvebo 12 - - v i e = 100 ua i cbo - - 0.1 ua v cb = 25 v i ebo - - 0.1 ua v eb = 12 v h fe 1 (forward) 200 - 1000 v ce = 2 v, i c =4 ma h fe 1 (reverse) 20 - - v ce = 2 v, i c =4 ma v ce(sat) - - 0.25 v i c =100 ma, i b =10 ma v be(sat) - - 1 v i c =100 ma, i b =10 ma ft - 60 - mhz v ce = 10 v, i c = 1 ma, f = 100 mhz c ob - 10 - pf v cb = 10 v, i e = 0, f = 1 mhz r (on) - 0.6 - v in =0.3 v, i b =1ma, f=1khz collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3
elektronische bauelemente KTD1304 0.3 a, 25 v npn plastic encapsulated transistor 01-june-2005 rev. a page 2 of 2 characteristic curves KTD1304
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